Abstract
AbstractWe have investigated the composition dependence of magnetic tunnel junctions (MTJs) with Nb‐alloyed Al‐oxide (NbAlOx) and analyzed the microstructure changes and electrical property of Nb alloyed Al‐oxide layer. After annealing, tunnel magnetoresistance (TMR) ratio of MTJ with Nb‐alloyed Al‐oxide barrier increased up to 38.5% at 9.26 at.% Nb. As the Nb concentration increases, the grain size decreases and the microstructure becomes a dense, fine equiaxed‐type structure with fine, continuous selected area diffraction (SAD) patterns, until Nb concentration reaches 9 at.%. The microstructural changes of Nb‐alloyed Al layer results in smooth interface roughness, so that we could achieve a high TMR ratio. Resistance decreased from 900 Ω to 220 Ω and barrier height decreased from 1.62 eV to 0.847 eV at 9.26 at.% Nb. We speculated that the reduction of junction resistance of the MTJ with Nb‐doped Al‐oxide barrier was due to Nb d states formation in the band gap. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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