Abstract
The effect of a nanostructured surface of radiation-oxidized aluminum on radiolytic processes in n-hexane was investigated. It was ascertained that the decreased thickness of oxide films on Al surface by approximately two orders of magnitude (from 600 to 8 nm) led to an increase in the rate of molecular hydrogen formation by a factor of ∼7 (from 1.1 to 7.6 × 1015 molecule g−1 s−1); meanwhile, the radiation chemical yield of H2 changed from 4.3 to 8.2 molecules/100 eV. The results obtained were interpreted in terms of the difference in the degree of imperfection of the surfaces of radiation-generated Al plates and enhancement of radiation-generated centers, which was evidenced by AFM images and RTL measurements.
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