Abstract
In this work, the computational analysis on use of nanostructures to both III-Nitride and Kesterite solar cell are presented and compared. The scope behind the comparative analysis of III-nitride and kesterite material based solar cells is due to their excellent material properties, which made them suitable as an absorber for solar cells. In III-nitride based solar cells, stress induced polarization charges play an important role in carrier dynamics of cell, whereas, kesterite based cells suffer from detrimental effect due to its in-house defects. Here, an analysis is carried out to understand the above mentioned important effects, i.e., carrier transport mechanisms under the influence of polarization charges in III-nitride materials and in presence of defects in kesterite materials with nanostructures. It is anticipated that, nanostructures provide lots of advantages over bulk layer in order to overcome the detrimental effects in solar cells. A detailed comparative analysis of both type of solar cells are carried out. Finally, quantum efficiency measurement is carried out in order to observe the range of light absorption in each structures. It is quite interesting to observe that nanostructure doesn’t boost the performance of the solar cell unless until the device is engineered properly. It is purely depends on carrier recovery and transport from the nanostructures.
Highlights
Ranging from few watts of electricity generation to multimegawatt power station, harnessing of energy from sunlight using semiconductor device is one of the optimum solution to fossil fuel crisis
Use of nanostructure in GaN/InGaN QW solar cell reveal that detrimental effect of bulk III-nitride material can be overcome by using proper design of thin film layers
Effect of polarization charges (PCs) is more pronounced in planar solar cell instead of nano enabled structures
Summary
Ranging from few watts of electricity generation to multimegawatt power station, harnessing of energy from sunlight using semiconductor device is one of the optimum solution to fossil fuel crisis. This motivation is driving immense scientific interest to develop high-performance solar cells using InxGa1−xN material This alloy has direct band gap with high carrier mobility, drift velocity, high saturation velocity, stable radiation resistance, thermal stability [5], [6] and optical absorption of 105 cm, which add more interest to explore further for generation photovoltaic (PV) applications [2], [3], [7]. It’s concluded from the literature that incorporation of Multiple QWs (MQWs) have two primary effects: (i) the short-circuit current (Jsc) increases because of the additional absorption of low-energy photons in the lower band gap QWs; (ii) the open-circuit voltage (Voc) decreases because of the increased recombination of carriers trapped in the QWs. The question that still remain is whether efficiency of CZTS and GaN/InGaN based solar cell can be increased as comparable to traditional or bulk solar cell. The simulator employs 6x6 k.p model, which was developed for wurtzite semiconductor material to calculate energy band structure of solar cell
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