Abstract

In this work we focus on magnetic relaxation in Mn80Ir20(12 nm)/Cu(6 nm)/Py(dF) antiferromagnet/Cu/ferromagnet (AFM/Cu/FM) multilayers with different thickness of the ferromagnetic permalloy layer. An effective FM-AFM interaction mediated via the conduction electrons in the nonmagnetic Cu spacer – the spin-pumping effect – is detected as an increase in the linewidth of the ferromagnetic resonance (FMR) spectra and a shift of the resonant magnetic field. We further find experimentally that the spin-pumping-induced contribution to the linewidth is inversely proportional to the thickness of the Py layer. We show that this thickness dependence likely originates from the dissipative dynamics of the free and localized spins in the AFM layer. The results obtained could be used for tailoring the dissipative properties of spintronic devices incorporating antiferromagnetic layers.

Highlights

  • Antiferromagnets (AFMs) are attractive materials for spintronic applications

  • While the previous experiments[3,4] have studied the damping dependence vs thickness of the antiferromagnetic film (AFM) layer, we focus on the properties of the ferromagnetic layer (FM) layer and especially the FM/NM interface

  • The spin current can induce exchange of angular momentum between the different subsystems of the conduction and localized electrons in the NM and AFM layers. It can stimulate additional spin pumping from the AFM layer induced by the dynamic magnetization MAF, which follows the motion of the localized AFM moments.[13,17,18]

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Summary

Introduction

Antiferromagnets (AFMs) are attractive materials for spintronic applications. They operate at high frequencies and have the potential to functionally fill the “terahertz gap” in electronics. When FMR is excited, a moving magnetization in the FM pumps a spin current into the NM and AFM layers.[16] The spin current is proportional to the effective field HF, which determines the The spin current can induce exchange of angular momentum between the different subsystems of the conduction and localized electrons in the NM and AFM layers.

Results
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