Abstract
Nanometer MgO (nano-MgO) particles were introduced into MgB 2 tapes prepared by the in situ PIT process to elucidate the influence of this major impurity phase in MgB 2 tapes and wires on the current transport property. The critical temperature, microstructure, flux pinning ability and transport property of MgB 2 tapes were studied with respect to the doping contents of nano-MgO particles. It was found that light doping of nano-MgO (⩽2.5 wt.%) could increase the J c property of MgB 2 tapes through enhancing the grain connectivity and core density. A 50% enhancement in J c (10 T, 4.2 K) was obtained when adding 1.25 wt.% nano-MgO into MgB 2. Further increasing the doing content of nano-MgO would decrease the critical temperature of MgB 2 rapidly, however, the excess nano-MgO particles might be able to serve as extra pinning centers, which improved the J c– B performance of MgB 2 at higher temperature and in higher magnetic field.
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