Abstract
The ZnSe single crystals were grown by chemical vapor transport (CVT) technique using iodine as a transporting agent. As grown ZnSe single crystals have been implanted by N5+ ion at 45keV energy in room temperature with various fluences of 1×1015, 5×1015, 1×1016 and 5×1016 ions/cm2. The lattice constants of the as grown and implanted ZnSe single crystals are 5.57 and 5.45Å respectively. The photoluminescence studies reveal that N5+ implanted ZnSe has the band edge emission at 468nm (2.64eV) and broad luminescence peak due to defect level green emission at 551nm (2.25eV) and yellow emission 592nm (2.09eV). The as grown ZnSe crystal has the absorption cut off at 483nm whereas the cut off increases from 489 to 524nm with an increase in ion fluences. The frequency of vibration for as grown ZnSe crystal is 504cm−1 and for implanted ZnSe samples, the frequencies are 657–677cm−1 (NZn bending mode) and 2337–2353cm−1 (NSe stretching mode) which are due to bond formation of N.
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