Abstract
This research included the preparation of (ZnO) thin films by CBD technique for the deposition of chemical bath thickness (150 ± 20nm). X-ray diffraction was analyzed and showed that the films crystallize in a polycrystalline hexagonal structure, with a preferred direction along the level (100). Increased volume of calculated crystals for deposited films was found by increasing molar concentration. The surface morphology of films was studied by SEM, and the surface morphology of ZnO films is a heterogeneous distribution. The optical properties of all deposited ZnO films contained a spectral permeability and absorption spectrum in the wavelength range (300-1100nm), and the transmittance decreased with increasing molar concentration, it was found that the value of the light energy gap (Eg) increases with increasing molecular concentration band gap between 3.1 and 3.2 eV.
Highlights
Thin-film is called a layer or several layers of material atoms that do not intersect with a thickness less than "1mm" (Look, 2001; Ratner, 2002) With the development of the economy and industry, environmental defects have become more acute over the past decades (Xu et al, 2003a)
ZnO is a useful semiconductor material, environmentally friendly and environmentally friendly due to its typical properties, such as the direct direct-inhibited band (3.3 volts) in the present work The effect of molar concentration on the optical and structural properties of thin films of ZnO prepared by the deposition of a chemical bath (Fritzsche and Tauc, 1974)
X-ray diffraction patterns (XRD) for Plano nano-ZnO films (0.1,0.2, 0.3) M were obtained by CBD technique
Summary
Thin-film is called a layer or several layers of material atoms that do not intersect with a thickness less than "1mm" (Look, 2001; Ratner, 2002) With the development of the economy and industry, environmental defects have become more acute over the past decades (Xu et al, 2003a). Those who resist environmental degradation, and can stay in the environment for a long time, are more dangerous to living organisms(Ebothé et al, 2003; Munef, 2015; Schropp and Madan, 1989). ZnO thin films have been studied as an active channel material in the development of thin film transistors due to the characteristics of n-type semiconductors and excellent thermal stability and can be well-directed crystals in different substrates(Öztas and Bedir, 2008; Zhang and Ma, 1996). ZnO is a useful semiconductor material, environmentally friendly and environmentally friendly due to its typical properties, such as the direct direct-inhibited band (3.3 volts) in the present work The effect of molar concentration on the optical and structural properties of thin films of ZnO prepared by the deposition of a chemical bath (Fritzsche and Tauc, 1974)
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