Abstract

In this study, it was aimed to produce cobalt oxide (Co3O4) thin films with improved optical, electrical, and electrochemical properties for device applications with a simple and low-cost method. Mo, W, and dual Mo and W at the ratio 10 wt% of Co3O4 were added into the solutions. The prepared solutions were coated on glass substrates by spin coating method. The produced thin films' structural, morphological, optical, electrical, and electrochemical properties were examined. As a result of doping, the optical, morphological, conductivity, and electrochemical properties of Co3O4 thin films improved and more stable structures were formed. The Mo and W co-doping provided the most improvement in the properties of the Co3O4 thin film. The results obtained showed that the Mo and W co-doped Co3O4 thin film is a potential candidate for highly efficient electrochemical applications.

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