Effect of Mn2+ doping on the lattice and the microwave dielectric properties of MgTa2O6 ceramics

Abstract

A series of Mn2+-doped Mg1-xMnxTa2O6 (x = 0.02, 0.04, 0.06, 0.08, 0.10, 0.12) ceramics were synthesized by solid-state reaction method. The influence of introducing Mn–O bonds as a partial replacement for Mg–O bonds on the lattice and microwave dielectric properties was systematically investigated. XRD and Rietveld refinement confirm that Mn2+ occupies the 2a Wyckoff position and forms a pure trirutile phase. Moreover, based on the chemical bond theory, the dielectric constant is mainly affected by the ionicity of the Ta–O bond. The lattice and dielectric properties remain relatively stable with Mn2+ doping below 0.1, but excessive Mn2+ doping leads to pronounced distortion of the lattice, which is not beneficial for lattice stability and microwave dielectric properties. Introducing an appropriate amount of Mn–O bonds with high bond dissociation energy facilitates MgO6 octahedron stability, which improves the thermal stability of the lattice. Accordingly, the microwave dielectric properties for 0.06 Mn2+-doped MgTa2O6 ceramics were determined: εr = 28, Q × f = 105,000 GHz (at 7.5 GHz), τf = 19.5 ppm/°C.