Abstract
AbstractMn doped ZnO thin films were grown using pulsed laser deposition technique on (001) Al2O3 substrates. The x-ray diffraction data confirmed highly c-axis oriented and hexagonal structure of ZnO and Mn doped ZnO thin films. However, an unidentified secondary peak was observed at very close to ZnO (002) peak. Micro Raman spectra of ceramics as well as thin films showed disorder induced Raman bands besides standard wurtzite ZnO modes. The intensity of several LO modes of ZnO was increased with the increase of Mn concentration. Optical absorption data showed an additional absorption band towards lower than bandgap energy (3 eV) with the increase in Mn content. The incorporation of Mn in ZnO thin films reduced the value of resistivities and mobilities with an increase in carrier concentrations.
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