Abstract
The reason that the (Ni, Nb)-doped SnO 2 varistors exhibit poorer densification and electrical nonlinearity than the (Co, Nb)-doped SnO 2 varistors is explained. The effect of Mn 2+ on the electrical nonlinear properties of SnO 2 based ceramics were investigated. The sample doped with 0.10 mol% MnCO 3 exhibits the highest reference electrical field of 686.89 V/mm, the highest electrical nonlinear coefficient of 12.9, which is consistent with the highest grain-boundary defect barriers. It can be explained by the effect of the substitution of Sn 4+ for Mn 2+, which facilitate the formation of the defect barriers, and the maximum of the substitution. The shrinkage rates increase with the doping of MnCO 3, although the sample doped with 0.5 mol% MnCO 3 appears the highest density (ρ=6.87 g/cm 3). In order to illustrate the grain boundary barriers formation in SnO 2.Ni 2O 3.Nb 2O 5.MnCO 3 varistors, a grain-boundary defect barrier model was introduced.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
