Abstract
We have studied the effect of microwave (cm wavelength region) radiation on some semiconductor materials (GaAs, GaP, InP) and surface-barrier diode structures based on them. The changes in photoluminescence spectra of bulk semiconductor materials indicate at a modification of their impurity-defect composition. The changes in electrophysical parameters of the device structures studied seem to result from a structural-compositional modification of the interfaces due to microwave irradiation.
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