Abstract
The effect of microwave power on the hydrogen and amorphous carbon contents of diamond films is investigated by the plasma chemical vapor deposition method. The input microwave power during diamond synthesis is varied between 330 and 500 W by using different holder materials, while a constant substrate temperature of 850°C is maintained. The hydrogen content in the synthesized diamond is measured by secondary ion mass spectrometry, and the relative amount of amorphous carbon is estimated from the Raman spectra. The hydrogen count normalized against that of carbon decreases logarithmically with increasing input power; the amorphous carbon amount also decreases with higher input power. The present experimental results prove that hydrogen content can be controlled by varying input microwave power during diamond deposition.
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