Abstract
We study the effects of microwave loss and device length on the nonlinear characteristics of intensity modulation response in 1.55 micrometer traveling-wave coplanar waveguide InGaAsP bulk electro-absorption modulator. By using device length segmentation scheme optical transmission curve reflecting the change of the electro-absorption effects at each segmented position due to the microwave loss is obtained, and then the intermodulation distortion and spurious free dynamic range characteristics of RF signal are analyzed. Device length decreases V<SUB>b3</SUB>, which is the bias voltage minimizing the third order and increases the third order intermodulation distortion (IMD3). On the other hand, microwave loss increases V<SUB>b3</SUB>, and reduces IMD3.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
