Abstract
Micro patterning and etching characteristics of Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film are very interesting for the fabrication of various ferroelectric micro devices. Besides the effects of plasma, the microstructure of PZT films was very important in etching process. In this article, the characteristics of reactive ion etching (RIE) of PZT films with different microstructure were investigated. The morphology and microstructure were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD). The properties of etching were measured by AFM and X-ray photoelectron spectroscopy (XPS). With the annealing temperature increased, the microstructure became more compact and the etching rate decreased. The highest etching rate was 13 nm/min when the microstructure of PZT film was amorphous.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
