Abstract
We report the growth of MgZnO thin films on Si (100) substrates using rf co-sputtering technique. It is found that structural and optical properties of MgZnO thin films highly depend on Mg/Zn rf power ratio and substrate temperature. We observe an increase in band gap of MgZnO thin films from 3.3 eV to 5.9 eV with increasing Mg/Zn rf power ratio from 0 to 2.22 at 400 °C substrate temperature. Whereas, XRD studies show a structural phase transition of MgZnO films from hexagonal wurtzite via mixed phase region of both wurtzite and cubic phases to cubic phase with increase in Mg/Zn rf power ratio. As the substrate temperature increases from 400 °C to 700 °C, the MgZnO films in the mixed phase region shows single cubic phase.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
