Abstract
Mg films of various thicknesses were deposited on Si(111) substrates at room temperature by resistive thermal evaporation method, and then the Mg/Si samples were annealed at 40 °C for 4 h. The effects of Mg film thickness on the formation and structure of Mg2Si films were investigated. The results showed that the crystallization quality of Mg2Si films was strongly influenced by the thickness of Mg film. The XRD peak intensity of Mg2Si (220) gradually increased initially and then decreased with increasing Mg film thickness. The XRD peak intensity of Mg2Si (220) reached its maximum when the Mg film of 380 nm was used. The thickness of the Mg2Si film annealed at 400 °C for 4 h was approximately 3 times of the Mg film.
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