Abstract
Undoped ZnO and Mg 0.1Zn 0.9O films, both with good crystalline quality and smooth surface, were grown on c-cut sapphire by pulsed laser deposition (PLD) technique. Hydrogen-sensing measurements indicated that the MZO film showed much higher H 2 sensing performance than the undoped ZnO film did. The sensor response is 2.9 for undoped ZnO film to 5000 ppm H 2 at 300 °C. The gas response increased to about 50 for the MZO film measured under the same condition. To understand the enhancement of the sensing performances of the MZO film, the gas sensing mechanism of the films was proposed and discussed.
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