Abstract
Sol-gel-processed Mg-doped SnO2 thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The results indicated that an optimal Mg concentration yielded an improved negative bias stability and increased optical band gap, resulting in transparent devices. Furthermore, the optimal device performance was obtained with 0.5 wt% Mg. The fabricated 0.5 wt% Mg-doped SnO2 TFT was characterized by a field effect mobility, a subthreshold swing, and Ion/Ioff ratio of 4.23 cm2/Vs, 1.37 V/decade, and ~1 × 107, respectively. The added Mg suppressed oxygen-vacancy formation, thereby improving the bias stability. This work may pave the way for the development of alkaline-earth-metal-doped SnO2-based thin-film devices.
Highlights
Oxide semiconductor-based thin-film transistors (TFTs) have attracted considerable attention due to their potential application in next-generation displays, including transparent displays, transparent sensors, and electrochromic windows [1,2,3,4]
In the work reported here, we describe the first-ever Mg-doped SnO2 TFTs fabricated by means of a sol-gel method
This work may pave the way for the development of alkaline earth-metal-doped SnO2 -based thin-film devices
Summary
Oxide semiconductor-based thin-film transistors (TFTs) have attracted considerable attention due to their potential application in next-generation displays, including transparent displays, transparent sensors, and electrochromic windows [1,2,3,4]. Indium-based metal-oxide TFTs can be fabricated through a low-temperature process, unlike conventional polysilicon or amorphous silicon-based thin-film transistors [5,6,7,8]. The electronic configuration of Sn (1s2 2s2 p63 s2 p6 d10 5s2 p2 ) is similar to that of In (1s2 2s2 p6 3s2 p6 d10 4s2 p6 d10 5s2 p1 ) [10] Owing to these attributes, TFTs fabricated with SnO2 are characterized by excellent electrical properties [11,12,13]. The instability originates from charge trap sites with oxygen vacancies or other defect sites [14,15,16]. Oxygen vacancies can act as carriers as well as defects, thereby causing instability
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