Abstract
Effect of Mg doping on terahertz (THz) emission from InN with different lattice polarities was studied. Strong enhancement of THz emission was observed from InN with appropriate Mg-concentrations (1018 cm−3), which is independent of lattice polarity. The buried p-type layers show stronger THz emission than the n-type ones. The dominant mechanism for THz emission was found to be photo-Dember effect and the emission intensity was inversely proportional to the conductivity, which is beneficial to investigate THz emission from InN since the conductivity can be more accurately measured than the carrier concentration and mobility due to the electron accumulation on surface.
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