Abstract
A light-emitting diode (LED) structure containing a low-temperature (LT) GaN interlayer between active region and AlGaN electron blocking layer is proposed to improve the performance of InGaN-based green LEDs. The experimental and simulated results show that, as the Mg doping depth in the LT-GaN interlayer increases, the hole injection efficiency gets improved and electron current leakage decreases, while defect-related nonradiative recombination increases. With an optimized Mg doping depth in the LT-GaN interlayer, a substantial suppression of efficiency droop can be achieved compared with the conventional LED.
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