Effect of MeV O 2+ implantation on the reactive ion etch rate of LiTaO 3

Abstract

The etch rate of LiTaO 3 in CF 4/CHF 3 plasmas was increased by ∼50% by prior implantation with MeV O 2+ ions. The etch rate of LiTaO 3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO 3 in CF 4/CHF 3 plasmas has been identified as a process of ion-enhanced chemical etching.