Abstract
We report the variation of secondary-electron yield and target temperature with the variation of ion beam intensity during 100 MeV N+5 bombardment on Si surfaces. Theoretical understanding of secondary-electron emission during ion bombardment predicts no variation of yield with ion beam intensity. We discovered that the variation of secondary-electron yield arises due to the rise of local temperature at ion impact sites of the target. The secondary-electron yield first decreases with the increase of ion beam current but subsequently, it increases with the further rise of beam current. The initial decrease is due to the temperature-dependent change of electrochemical potential of Si. The considerable increase of the secondary-electron yield with a further increase of ion beam current is caused by local surface heating and subsequent additional thermionic electron emission. We have estimated the surface temperature of ion-impact sites by separating the thermionic electron current from the collisional secondary electron current.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
