Abstract
Caesium-methylammonium lead iodide-bromide perovskites (CsxMA1−xPbI3−xBrx) is interesting for stable and high-voltage tandem solar cells. Here, we report a systematic material and device study of CsxMA1−xPbI3−xBrx (x = 0, 5, 10 and 15%) perovskite films. Cs-Br incorporation reduces carrier lifetime of as-deposited films, from 21.5 μs for x = 0% to 5.8 μs for x = 15%. Unlike pure MA films, Cs-Br incorporated films were not only more resilient to degradation, their carrier lifetime increased by 50%–300% when exposed to ambient due to the humidity-assisted healing. The morphology of as-deposited films was poor. Methylamine vapor exposure (MVE) was used to improve the morphology and crystallinity, which further improved carrier lifetime up to 50 μs. Devices with efficiency >17% were fabricated on MVE treated Cs0.10MA0.90PbI2.90Br0.10 films. The short circuit current density was further increased by fabricating devices on ‘aged’ films which have higher lifetime due to humidity healing. Best Cs0.10MA0.90PbI2.90Br0.10 devices show good ambient stability with VOC and FF unchanged even after 5 days of ambient exposure.
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