Abstract
An FET-type K +-sensitive sensor with a membrane composed of a hydrophobic inner layer and a hydrophilic outer layer has been fabricated by a photolithographic process. The base chip for the sensor is a pH-ISFET with a thin Si 3N 4 layer. Negative photoresist (OMR-83) is used as the inner layer and poly (vinyl pyrrolidinone-co-vinyl acetate) solution in tetrahydrofuran containing valinomycin and 2,6-bis-( p-azidobenzylidene) cyclohexanone photosensitizer is used as the outer sensing membrane material. The K-ISFET sensor with double-layered membrane shows a high sensitivity (56 mV/decade) toward K + ion, rapid response (1–2 s) and low interference (less than 3 mV/decade) from the competing H + ion.
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