Effect of mechanical stresses on the dielectric response of PZT ferroelectric thin films

Abstract

This paper reports on the results of the investigation into the effect of mechanical stresses on the dielectric properties of PZT ferroelectric thin films. An external load G applied to the sample brings about an increase in the residual tensile stress along one of the axes of the film. It is demonstrated that, in weak and moderate electric fields, an increase in the stress σ leads to an increase in the permittivity e′ of the sample. A further increase in the strength of the measuring electric field results in the opposite effect: the permittivity e′ decreases with increasing external load G. The observed effects are explained in terms of the specific features revealed in the behavior of the domain structure of the ferroelectric thin films in fields of internal stresses.