Abstract
Boron doped ZnO thin films have been deposited on glass substrate at temperature (350 ± 5) °C by spray pyrolysis technique and studied structural and physical properties. XRD study reveals polycrystalline hexagonal structure. The crystallite size varies in the range 8 – 44 nm irrespective of crystal planes and doping concentration of B as well. SEM study shows the formation of nano-walls in B doped ZnO thin film. There are some voids in the film, which decreased as the B concentration increased. Temperature dependent resistivity of the films has been measured within the temperature range 300 K to 475 K for different B doped samples, which reveals the semiconducting nature of the films. Activation energies ΔE1, varies from (0.022 - 0.035) eV in the temperature region (303 K-400 K) and ΔE2, varies from (0.033 - 0.188) eV in (400 K - 475 K) depending on Boron concentrations.
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