Abstract
Amorphous chalcogenide semiconductors have advantageous optical and electrochemical properties, but the influence of the thermal treatment temperature on these properties is not clearly understood. In this study, In3+-incorporated Sn1-xMnxTe nanocomposite films were prepared on commercial glass substrates using a solution-based doctor-blading method and low thermal treatment temperatures. The effect of the thermal treatment temperature (50–200 °C) on the optical and electrical properties of the nanocomposite films was investigated. X-ray diffraction results confirmed that an amorphous nanocomposite film was formed at each thermal treatment temperature. However, variation in the optical parameters and electrical performance of the nanocomposite films with the thermal treatment temperature indicated that this temperature should not exceed 150 °C. Optimization of the thermal treatment temperature improved the light-harvesting ability of the nanocomposite films and enhanced the polarization of the incident radiation. These phenomena were caused by an increase in atomic oscillations associated with higher dipole moments in the films. The nanocomposite films subjected to thermal treatment at temperatures below 150 °C also exhibited the highest electrical conductivity. These results will allow the synthesis of improved materials for applications in solar selective surfaces and electro-optical, photovoltaic-thermal, and sensor devices.
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