Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gate

Abstract

The effects of low temperature annealing, such as post high-k dielectric deposition annealing (PDA), post metal annealing (PMA) and forming gas annealing (FGA) on the electrical characteristics of a metal—oxide—semiconductor (MOS) capacitor with a TiN metal gate and a HfO2 dielectric are systematically investigated. It can be found that the low temperature annealing can improve the capacitance—voltage hysteresis performance significantly at the cost of increasing gate leakage current. Moreover, FGA could effectively decrease the interfacial state density and oxygen vacancy density, and PDA could make the flat band positively shift which is suitable for P-type MOSs.