Abstract
In amorphous SiGe multilayers annealing at 858 K under 180 bar led to the depression of porosity formation. In crystalline Ni-Zr multilayers a small enhancement of the growth of amorphous phase was observed under 200 bar. In CoSn bilayers the kinetics of electrical resistivity at 298 K showed a characteristic cross-over as the pressure increased above 150 bar.
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