Abstract
Vanadium di-oxide (VO2) and vanadium tetra oxide (V2O4) powders are exposed to cesium (Cs) ion irradiation using Pelletron accelerator. The energy of the Cs ions ranges from 0.2 keV to 5 keV. Mass spectroscopic data from the accelerator is plotted for various energy ranges. Un-irradiated samples and Cs ion irradiated samples are characterized by using x-ray diffraction (XRD), scanning electron microscope (SEM), Raman spectroscopy and four-point probe method. XRD analysis showed improved VO2 crystallinity after ion irradiation. The V2O4 sample shows amorphous behavior after ion irradiation. Dislocation density and tolerance are calculated to explore structure distortion after ion irradiation. Raman spectroscopy reveals vibrational and rotational modes of bonding with oxygen and vanadium. SEM results explain the reduction in agglomeration after Cs ion irradiation. The resistivity of un-irradiated and irradiated (VO2 and V2O4) samples is calculated by four-point probe method. The resistivity of vanadium oxide is decreased after Cs ion irradiation to make it a potential candidate for optoelectrical applications.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
