Abstract
The effect of previous low dose (10 3 rad) gamma irradiation on the annealing temperature of the radiation-induced defects in ion implanted MOS samples is studied by means of thermally stimulated current (TSC) method. In the work presented here two groups of samples (first—without any additional treatment and second—gamma irradiated after oxidation samples) are used. Then both groups are implanted through the oxide with boron ions with energy 15 KeV and dose of 1.2×10 12 cm −2. Thermal treating of the samples at different temperature is carried out. Full thermal annealing of the radiation defects introduced by ion implantation in the samples from the first group is observed after 15 min annealing at 700 °C. It is shown that gamma irradiation leads to a lowering of the annealing temperature—after 15 min annealing at 500 °C, TSC spectra of the double treated samples is not observed. A possible explanation of the results is proposed.
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