Abstract
The threshold voltage shifts through the long term stress are measured for IGFETs. The gate bias dependence shows that the hot electron trapping is affected strongly by the electric field in the gate insulator. The threshold voltage shift versus time is well explained with the simple theory modified by the effect of the trapped charge on the subsequent electron trapping. The access time shifts are measured for actual 16 Kbit dynamic MOS RAM's. The access time degradations correspond well relatively to the threshold voltage degradations for the IGFET's.
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