Abstract
Semiconductor optoelectronic devices based on a single ZnO nanotetrapod were constructed with Ohmic contact characteristics and the effect of localized UV irradiation on transport property in ZnO nanotetrapod device has been investigated. The measurements for the I-V characteristics and time-resolved measurements of current were conducted. The results indicate that the irradiation under UV light irradiation at the third leg of the tetrapod can readily tune the electrical transport property of the tetrapod along with favorable repeatability and reversibility. The current becomes larger as the UV light power density increases. A probable mechanism has been proposed and discussed. The ZnO nanotetrapod could be potentially used as detectors in irradiation environments.
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