Abstract
The effect of irradiations of energetic heavy ion beams on the structural and electrical properties of ZnSe thin films deposited on In2O3:Sn (ITO) coated glass substrate is given. The ZnSe thin films having a thickness of 100nm were deposited by physical vapour deposition on 200nm thick ITO coated glass. The ZnSe films were irradiated with 20MeV carbon, phosphorus and copper ion beams using the 5MV tandem accelerator at National Centre for Physics, Islamabad. The ion irradiations have shown the improvement in the structural properties in terms of increase in grain size and decrease in the lattice strain. The measurements of photo decay have shown that the decay of the photocurrent has been prolonged in the sample irradiated with carbon ion as compared to the phosphorous and copper irradiated sample.
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