Abstract
The effects of illumination level during anodisation on the photoluminescence (PL) properties of n-type porous Si have been studied. The influence of illumination intensity on PL properties is interpreted as a competition between the rate of production of new luminescent material by anodic etching and the rate of photochemical dissolution of this material. The results are different for heavily doped Si substrates and for n-type polycrystalline silicon films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
