Effect of light and magnetic field on double injection in semiconductor layers

Abstract

Theoretical investigations are made of the stationary double injection in a thin semiconductor layer, when it is simultaneously affected by monochromatic radiation and an external magnetic field. A fundamental two-dimensional equation in drift approximation, that takes into account the injected space charge, recombination of charge carriers, and magnetic field quadratic effects are derived. The equation is solved for the semiconductor and insulator regimes, and expressions are found for the layer current-voltage characteristics, which are analyzed for the cases of weak and strong light absorption. It is shown that in the latter case for magnetic fields of opposite directions there can exist a difference in magnetosensitivity and even the effect of polar magneto-sensitivity in the layer with the same velocities of surface recombination. The growth of the layer magnetosensitivity under the effect of light and the increase of the layer photosensitivity in the magnetic field are also observed. These results are confirmed experimentally in silicon layers. [Russian Text Ignored].