Abstract
Highly repeatable, photosensitive nonvolatile resistive random access memory (ReRAM) made of a Si/SiO2/Cu/PRPC/Ta stack with a photoresponsive polymer composite (PRPC) as the active medium is presented. The device shows errorless bipolar resistive switching with more than 100 cycles repeatability and stable SET and RESET voltages. It changes its resistive states in response to white light and recovers completely after removal of the light source. It also changes its state in response to heat and recovers randomly after the removal of the heat source. The phenomenon is explained by valance charge transfer along with a space‐charge‐limited conduction (SCLC) mechanism. The initial state of the device is low resistance state (LRS) because of electric‐field‐induced formation of valance charge transfer states. It switches to a high resistance state (HRS) due to electric‐field‐induced dissociation of the charge transfer states.
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