Effect of lens focusing distance on laser-induced silicon plasmas at different sample temperatures

Abstract

We investigated the dependence of laser-induced breakdown spectral intensity on the focusing position of a lens at different sample temperatures (room temperature to 300 °C) in atmosphere. A Q-switched Nd:YAG nanosecond pulsed laser with 1064 nm wavelength and 10 ns pulse width was used to ablate silicon to produce plasma. It was confirmed that the increase in the sample’s initial temperature could improve spectral line intensity. In addition, when the distance from the target surface to the focal point increased, the intensity firstly rose, and then dropped. The trend of change with distance was more obvious at higher sample temperatures. By observing the distribution of the normalized ratio of Si atomic spectral line intensity and Si ionic spectral line intensity as functions of distance and temperature, the maximum value of normalized ratio appeared at the longer distance as the initial temperature was higher, while the maximum ratio appeared at the shorter distance as the sample temperature was lower.