Abstract
The excess leakage current due to the ion implantation isolation process used in the fabrication of double mesa Self Passivated GaAlAs / GaInP / GaAs Heterojunction Bipolar Transistors (SP-HBT) has been investigated. This ion implantation process, used to limit the active emitter length results in a drastic reduction of the current gain. The ideality factor of the recombination current associated with the ion implantation has been found to be 1.8, close to the conventional value of 2.
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