Abstract
Junction diodes of p+ Si1−xGex-n Si (0⩽x⩽0.2) were made by a liquid-phase epitaxial method. A lattice misfit larger than 0.3% present at the junction interface caused an increase of the current density at small forward bias and also a weak voltage dependence of the current at large forward bias. The forward I-V characteristics were explained in terms of carrier recombination generation in the space-charge region of an asymmetrical pn junction.
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