Effect of laser wavelength on the characterization of V2O5 NPs/PS photodetector synthesized by pulsed laser deposition

Abstract

The present study focuses on how three distinct Nd-YAG laser wavelengths affect the properties of a V2O5 heterojunction photodetector fabricated on a porous Silicon (100) n-type substrate. Pulsed laser deposition was used to create V2O5 nanoparticles on porous Silicon using various wavelengths of pulse lasers (355, 532, and 1064) nm. The structural, optical, morphological, and electrical characteristics of the V2O5 NPs are studied using X-ray diffraction (XRD), Raman spectroscopy, field emission-scanning electron microscope (FE-SEM), and photoluminescence (PL) spectroscopy. The results demonstrate that the V2O5 NPs synthesized have an orthorhombic structure with a preference for the (111) plane. The PL emission reveals that the predominated peak is about 543 nm and 547 nm, whereas the minor peaks are around 780 nm and 781 nm. The number of ideality factors was calculated, with values ranging from 1.08 to 4.44 and barrier height ranging from 0.65 eV to 0.71 eV. Finally, V2O5 nanoparticles can be observed to have significant effects on their properties, as well as potential effects on their photodetector efficiency, which can be increased by increasing the wavelength of laser pulses due to an increase in particle production in the PS substrate, which leads to particle convergence and coalescence. The results indicate that the V2O5 NPS is a good contender for high performance photodetector applications in commercial photoelectronics.