Abstract
Laser shock wave cleaning (LSC) has been introduced to remove particles on patterned wafers. For the application of LSC to EUV mask cleaning or any BEOL cleaning process, the questions have been raised how the particles behave when patterns exist. The effect of pattern topography on the particle removal was investigated on trench patterns using LSC. The topographical effect was characterized as a function of laser shock wave propagation direction. Comparison of particle removal efficiency (PRE) between parallel and vertical direction of laser shock wave to the trench patterns was done. PRE was lower in case of vertical direction when compared to parallel direction. LSC in parallel direction has more PRE than in vertical direction and hence topography is an important consideration during LSC.
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