Effect of laser annealing on the distribution of defect levels in CdSe films

Abstract

Effects of laser treatment on the modification and/or distribution of defect levels in chemically-deposited CdSe thin films have been discussed. By annealing the CdSe films with laser in air, we could observe a drastic reduction of defect density and a redistribution of defect states in the low quality chemically deposited films. Increase of photoluminescence efficiency by laser treatment demonstrates the effect of recombination enhanced defect reactions at the annealed region. By manipulating the laser power and the time of annealing, we could obtain the films of better optoelectronic quality. The process might be useful for the control of defect levels in chalcogenide thin films for their applications in optoelectronic devices.