Abstract
In this work, copper selenide thin films coated onto glass and transparent lanthanum substrates are studied. The (glass, La)/CuSe thin films which are prepared by the thermal evaporation technique under a vacuum pressure of 10−5 mbar are structurally, morphologically, optically, dielectrically and electrically characterized. Lanthanum substrates improved the crystallinity by increasing the crystallite size and decreasing both of the microstrains and defect density of copper selenide. La substrates redshifts the energy band gap and doubled the dielectric constant values. In addition, employing Drude–Lorentz approaches for optical conduction to fit the dielectric constant provided information about the effects of La substrates on the drift mobility, plasmon frequency, free carrier density and scattering times at femtosecond level. The drift mobility increased and the plasmon frequency range is modified when La substrates are used. Verifying impedance spectroscopy tests in the microwave frequency domain have shown the ability of the La(gate)/CuSe/Ag (source) transistors performing as band pass filters. These filters are suitable for 5G technologies. The microwave cutoff frequency reached ~ 5.0 GHz at a notch frequency of 2.80 GHz of the glass/La/CuSe/Ag highpass filters.
Highlights
Copper selenide thin films have captured wide interest due to their applications as electrocatalysts, counter electrodes in solar cells and self-repairable electrodes [1]
Here in this work, we will report the structural, morphological, optical, dielectric and optical properties of copper selenide thin films coated onto glass and transparent lanthanum substrates of thickness of 150 nm
Thin films of copper selenide coated onto glass and 150 nm thick transparent lanthanum substrates are shown in inset-1 of Fig. 1
Summary
Copper selenide thin films have captured wide interest due to their applications as electrocatalysts, counter electrodes in solar cells and self-repairable electrodes [1] They show novel thermoelectric properties and mentioned being suitable for flexible electronics [1]. The applied preparation methods on various types of substrates for depositing copper selenide films motivated us to prepare copper thin films by the thermal evaporation technique onto conductive transparent rare earth lanthanum substrates. The orbital states of lanthanum can reach those of CuSe allowing easier electronic conduction and optical transitions For this reason, here in this work, we will report the structural, morphological, optical, dielectric and optical properties of copper selenide thin films coated onto glass and transparent lanthanum substrates of thickness of 150 nm. The effects of the La substrates on the lattice parameters, crystallite size, microstrain, stacking faults, optical transmittance, reflectance, absorption coefficient, energy band gap, dielectric constant and on the microwave band pass characteristics are reported
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