Abstract
BaZrxTi(1-x)O3 (x = 0∼0.15) (BZT) thin films were prepared by chemical solution deposition. LaNiO3 buffer layer was introduced to modify the structure and ferroelectric properties of the films. Results show that the BZT films deposited on Pt/Ti/SiO2/Si substrate have random orientation, but those on LaNiO3 buffered Pt/Ti/SiO2/Si substrate have highly (100) preferred orientation. Grain size and leakage current of the BZT films decrease with increase of Zr content. The BZT films with LaNiO3 buffer layer exhibit larger grain size and have higher remanent polarization, dielectric constant and tunability. This work reveals the promising application of highly (100) oriented BZT films in multifunctional ferroelectrics.
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