Abstract
Crystallization of amorphous Y- and La-doped HfO2 and ZrO2 nanophase powders was studied using thermal analysis and high-temperature x-ray diffraction. Substantial increase of crystallization temperature of amorphous hafnium and zirconium oxides could be achieved by alloying with La2O3. The crystallization temperature of Hf2La2O7 composition is higher than 900 °C, which makes it a candidate for advanced gate dielectrics. In contrast, Y-doping did not significantly raise the crystallization temperature.
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