Effect of junction interface modification of silicon heterojunction solar cells

Abstract

The interfaces of crystalline silicon heterojunction solar cells are extremely sensitive to contamination. SunsV oc measurements using blue and infrared filtered light in conjunction with the standard white light measurement have shown that a contamination problem on the front of the solar cell occurs when a thin film is deposited on the back. Chemical cleaning has indirectly shown that contamination is located between the p-aSi layer and the layer immediately below it. Although the chemical cleaning significantly improves the resulting solar cell performance parameters, their range is very wide. It has been determined that depositing a SiN x :H layer on the surface of the intrinsic a-Si layer on the emitter side of the solar cell and removing before deposition of the p-doped a-Si layer significantly improves the fill factor (FF) of crystalline silicon heterojunction solar cells made on n-type crystalline silicon wafers, and significantly narrows the range of the performance parameters of solar cells processed at the same time.