Abstract
The effect of Joule heating (JH) on electromigration (EM) was investigated using copper low-k interconnects. We found Black's empirical EM model works at a very wide stress conditions (I = 0.03 mA ∼ 3.5mA), where the temperature rise by JH ranges from 0°C to 240°C. EM modeling parameters were found to be 1.05eV and 1.4 for EM Ea and n, respectively. Extensive failure analysis and FEM simulations were carried out to understand the EM failure mode at various JH conditions and provide guidelines for the usage of JH-assisted EM test method and design-reliability rules.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
