Abstract
Ba 2BiInO 6 is a semiconductor which can be derived from Ba 2Bi 3+Bi 5+O 6 by substituting all the Bi 3+ ions. Presently we report on the isovalent substitution of Sb 5+ at Bi 5+ site. Sb acts as a sintering aid as well as a dopant. Doping results in an increase in the resistivity as well as thermopower. All the doped compositions show degenerate semiconducting behavior at high temperature. The highest figure of merit obtained is 2.4×10 −5 K −1 at 770 K for the x = 0.06 composition.
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